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TPN1R603PL,L1Q

N-Channel 30 V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 30 V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1) - 1
MAN. PRODUCT NUMBER : TPN1R603PL,L1Q Copy
MANUFACTURER : Toshiba Semiconductor and Storage Copy
SUP. PRODUCT NUMBER : TPN1R603PLL1QCT-ND Copy
SUPPLIER : Digi-KEY Electronics
DELIVERY TIME : 7 - 10 Work Day
PACKAGE TYPE : Cut Tape (CT)
IN STOCK : 32019 Adet (Overseas Stock)
CUSTOMS, SHIPPING INCLUDED for TURKEY
Yurt dışından Elektronik Komponent
DELIVERY TIME 7 - 10 Work Day
Tedarik Süresi
VAT Included Unit Price
Satış fiyatına tüm gümrük, yurtdışı kargo ve vergi masrafları DAHİLDİR.
75.09 TL
1.49 USD +VAT
Adet
Request Stock Notification
Notify Me When the Product Restock
Lead Time: 7 - 10
Estimated Shipping Date: 13.11.2025 - 18.11.2025
There will be no shipping on weekends or official holiday. NBD
Quantity
Unit Price
1
75.09 TL
1.49 USD +VAT
10
49.17 TL
0.97 USD +VAT
100
33.41 TL
0.66 USD +VAT
500
27.66 TL
0.55 USD +VAT
1000
25.12 TL
0.50 USD +VAT
2000
23.72 TL
0.47 USD +VAT
For Bulk Purchasing Get Offer.
TPN1R603PL,L1Q - TOSHIBA SEMICONDUCTOR AND STORAGE - MOSFET N-CH 30V 80A 8TSON
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 15 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature175°C
Grade-
Qualification-
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.1x3.1)
Package / Case8-PowerVDFN
İlişkili Ürünleri
Prepared by  T-Soft E-Commerce.