| SI2305CDS-T1-GE3 - VISHAY SILICONIX - MOSFET P-CH 8V 5.8A SOT23-3 | |
| Packaging | Cut Tape (CT) | 
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 
| Mounting Type | Surface Mount | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Technology | MOSFET (Metal Oxide) | 
| FET Type | P-Channel | 
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) | 
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.4A, 4.5V | 
| FET Feature | - | 
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) | 
| Vgs(th) (Max) @ Id | 1V @ 250µA | 
| Supplier Device Package | SOT-23-3 (TO-236) | 
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | 
| Vgs (Max) | ±8V | 
| Drain to Source Voltage (Vdss) | 8 V | 
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 8 V | 
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 4 V |