| GS61008TTRXUMA1 - INFINEON TECHNOLOGIES - GS61008T-TR | |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 27A, 6V |
| Vgs(th) (Max) @ Id | 1.3V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 6 V |
| Vgs (Max) | +7V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | - |
| Package / Case | 4-SMD, No Lead |