| FDC6321C - ONSEMI - MOSFET N/P-CH 25V 0.68A SSOT6 | |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 680mA, 460mA |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT™-6 |