| BYG21M-E3/TR - VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION - DIODE AVALANCHE 1KV 1.5A | |
| Packaging | Cut Tape (CT) |
| Diode Type | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 1.5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 120ns |
| Current - Reverse Leakage @ Vr | 1µA @ 1000V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |