| SI4816BDY-T1-E3 - VISHAY SILICONIX - MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC | |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A, 8.2A |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 6.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1W, 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |