| B250C800DM-E3/45 - VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION - BRIDGE RECT 1P 400V 900MA DFM | |
| Packaging | Tube |
| Package / Case | 4-EDIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Diode Type | Single Phase |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Technology | Standard |
| Supplier Device Package | DFM |
| Voltage - Peak Reverse (Max) | 400 V |
| Current - Average Rectified (Io) | 900 mA |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 900 mA |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V |