SI7611DN-T1-GE3
P-Channel 40 V 18A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
| SI7611DN-T1-GE3 - VISHAY SILICONIX - MOSFET P-CH 40V 18A PPAK1212-8 | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 39W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
