| SSM6N815R,LF - TOSHIBA SEMICONDUCTOR AND STORAGE - MOSFET 2N-CH 100V 2A 6TSOPF | |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4V Drive |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Power - Max | 1.8W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | 6-TSOP-F |