| IMT65R020M2HXUMA1 - INFINEON TECHNOLOGIES - SILICON CARBIDE MOSFET | |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 46.9A, 20V |
| Vgs(th) (Max) @ Id | 5.6V @ 9.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 2038 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 440W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-2 |
| Package / Case | 8-PowerSFN |