| UF3C065080B7S - ONSEMI - SICFET N-CH 650V 27A D2PAK-7 | |
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 136.4W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |