| PSMN2R9-100SSEJ - NEXPERIA USA INC. - POWERMOS ASFETS | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 210A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13280 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Package / Case | SOT-1235 |