| SQJQ910EL-T1_GE3 - VISHAY SILICONIX - MOSFET 2 N-CH 100V POWERPAK8X8 | |
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 8 x 8 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power - Max | 187W |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2832pF @ 50V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 8 x 8 Dual |