| DMN61D8LVT-7 - DIODES INCORPORATED - MOSFET 2N-CH 60V 0.63A TSOT26 | |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 630mA |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V |
| Power - Max | 820mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSOT-26 |