| G180C06Y - GOFORD SEMICONDUCTOR - MOSFET N/P-CH 60V 50A TO252-4 | |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 69W (Tc), 115W (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc), 60A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2429pF @ 30V, 4471pF @ 30V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 4.5V, 62nC @ 4.5V |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 2V @ 250µA, 4V @ 250µA |
| Supplier Device Package | TO-252-4 |