| G2K3N10L6 - GOFORD SEMICONDUCTOR - MOSFET 2N-CH 100V 3A SOT23-6L | |
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.67W (Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 536pF @ 50V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | SOT-23-6L |