LND150N8-G
N-Channel, Depletion Mode 500 V 30mA (Tj) 1.6W (Ta) Surface Mount SOT-89-3
| LND150N8-G - MICROCHIP TECHNOLOGY - MOSFET N-CH 500V 30MA SOT89-3 | |
| FET Type | N-Channel, Depletion Mode |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Rds On (Max) @ Id, Vgs | 1000Ohm @ 500µA, 0V |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-89-3 |
| Package / Case | TO-243AA |
