| US1MH - TAIWAN SEMICONDUCTOR CORPORATION - DIODE GEN PURP 1A DO214AC | |
| Packaging | Cut Tape (CT) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Qualification | AEC-Q101 |